EU Project GEOMDISS
GEOMDISS is a 3-year FET OPEN STREP project which started on 01.09.2009
The aim of this project is to investigate how dissipation influences the geometric phases and geometric pumping in quantum solid-state devices and to assess the role of geometric manipulations in future ICT applications. Since all realistic solid-state devices suffer from dissipation due to their coupling to uncontrolled environment with many degrees of freedom it is crucial to understand how the geometric effects are modified and whether they are still useful.